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Electrothermal modeling of GaN power transistor for high frequency power converter design

Archive ouverte : Communication dans un congrès

Pace, Loris | Chevalier, Florian | Videt, Arnaud | Defrance, N. | Idir, Nadir | de Jaeger, Jean-Claude

Edité par HAL CCSD ; IEEE

International audience. This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated.

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