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Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

Archive ouverte : Communication dans un congrès

Lu, Xuyang | Videt, Arnaud | Li, Ke | Faramehr, Soroush | Igic, Petar | Idir, Nadir

Edité par HAL CCSD

International audience. A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id-Vds region.

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