High-Q silicon nitride drum resonators strongly coupled to gates

Archive ouverte : Article de revue

Zhou, Xin | Venkatachalam, Srisaran | Zhou, Ronghua | Xu, Hao | Pokharel, Alok | Fefferman, Andrew | Zaknoune, Mohammed | Collin, Eddy

Edité par HAL CCSD ; American Chemical Society

International audience. Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ~ 1E4 (comparable to that of bare drums at room temperature) and present our ability to detect ? 10 mechanical modes at low temperature. The drum resonator is also coupled to a microwave cavity, so that we can perform optomechanical sideband pumping with a fairly good coupling strength G and demonstrate mechanical parametric amplification. This SiN drum resonator design provides efficient electrical integration and exhibits promising features for exploring mode coupling and signal processing.

• Contient
• Sujet
• Description
• Oeuvre