Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs

Archive ouverte : Article de revue

Lechaux, Y. | Fadjie, A. | Bollaert, S. | Talbo, V. | Mateos, J. | González, T | Vasallo, V | Wichmann, Nicolas

Edité par HAL CCSD ; IOP Publishing

International audience. In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1 was obtained for different treatments presented in this work.

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