75 nm gate length PHEMT with f max = 800 GHz using asymmetric gate recess: RF and noise investigation

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Samnouni, M. | Wichmann, Nicolas | Wallart, X. | Coinon, Christophe | Lepilliet, Sylvie | Bollaert, S.

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers

International audience. We report a high maximum frequency of oscillation (f max) and a current-gain cutoff frequency (f T) of 800 and 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHEMT), using an InGaAs/InAs composite channel and an asymmetric gate recess. This result was achieved with long gate length L G = 75 nm. The RF small signal equivalent circuit (SSEC) was extracted up to 110 GHz. Moreover, noise parameters extraction gives a minimum noise figure (NF min ) of 0.8 dB (with associated gain G ass = 16 dB) and 1.8 dB (with associated gain G ass = 11.6 dB) at 40 and 94 GHz, respectively. In this study, the gate leakage current was considered in the SSEC of the transistor ( g gf and g df ) and for extraction of the noise parameters.

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