Improvement of performance of a planar micro-thermoelectric generator for energy harvesting Application

Archive ouverte : Poster de conférence

Bel-Hadj, Ibrahim | Bougrioua, Zahia | Ziouche, K.

Edité par HAL CCSD

Session 3: Sensor systems & instrumentation for smart transportation & environment. International audience

Consulter en ligne

Suggestions

Du même auteur

Modélisation et optimisation d'un microgénérateur thermoélectrique planaire

Archive ouverte: Poster de conférence

Bel-Hadj, Ibrahim | 2019-06-03

National audience. Dans le domaine des microtechnologies, la récupération d'énergie (Energy Harvesting) est une thématique de recherche d’actualité qui vise à utiliser l'énergie présente dans l'environnement pour al...

Metal-based folded-thermopile for 2.5D micro-thermoelectric generators

Archive ouverte: Article de revue

Bel-Hadj, Ibrahim | 2022

To help you access and share this work, we have created a Share Link – a personalized URL providing 50 days' free access to your article. Anyone clicking on this link before February 08, 2023 will be taken directly to the final ve...

Fabrication of planar micro-ThermoElectric Generators integrating a 2.5D th...

Archive ouverte: Poster de conférence

Bel-Hadj, Ibrahim | 2022-09-13

International audience. In this work, we have developed a family of planar micro-thermoelectric generators (μTEGs), integrating a novel 2.5D thermopile topology periodically folded and distributed onto a multi-membr...

Du même sujet

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC ...

Archive ouverte: Article de revue

Harrouche, Kathia | 2023-01-22

International audience. In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a nonintentionally do...

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Archive ouverte: Communication dans un congrès

Harrouche, Kathia | 2020-08-04

International audience. We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows bo...

C-doped AlN/GaN HEMTs for High efficiency mmW applications

Archive ouverte: Communication dans un congrès

Pécheux, Romain | 2018-07-05

International audience. We report on high power-added-efficiency using AlN/GaN heterostructure with a carbon doped buffer layer for millimeter wave applications (C-doped HEMTs). The carbon doped HEMTs show high elec...

Short-term reliability of high performance Q-band AlN/GaN HEMTs

Archive ouverte: Communication dans un congrès

Kabouche, R. | 2020-04-28

International audience. We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performance...

High performance and highly robust AlN/GaN HEMTs for millimeter-wave operat...

Archive ouverte: Article de revue

Harrouche, Kathia | 2019

International audience. We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellen...

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructur...

Archive ouverte: Communication dans un congrès

Kabouche, Riad | 2018-09-23

International audience. We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers for millimeter-wave applications: 1) carbon doped GaN high el...

Chargement des enrichissements...