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Short-term reliability of high performance Q-band AlN/GaN HEMTs

Archive ouverte : Communication dans un congrès

Kabouche, R. | Harrouche, K. | Okada, Etienne | Medjdoub, F

Edité par HAL CCSD ; IEEE

International audience. We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performances in the millimeter wave range. It is found that the barrier thickness in this highly strain heterostructure has a major impact on the device reliability. The superior robustness when using thinner barrier (closer to the critical thickness) is attributed to the reduced strain.

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