Afficher la couverture 'Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Cooled Transistors Using Multi-PCB Assembly | Pace, Loris' en grand format
/5

0 avis

Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Cooled Transistors Using Multi-PCB Assembly

Archive ouverte : Communication dans un congrès

Pace, Loris | Chevalier, Florian | Duquesne, Thierry | Idir, Nadir

Edité par HAL CCSD

International audience. This paper proposes a Multi-PCB (M-PCB) design of a half-bridge using bottom-side cooled GaN transistors with optimal layout and thermal management. The fabrication process only requires limited technological capabilities and is well-suited for industrial applications. Electrical and thermal performances are evaluated by measurements and simulation and compared with previous works.

Consulter en ligne

Suggestions

Du même auteur

Parasitic loop inductances reduction in the PCB layout in GaN-based power c...

Archive ouverte: Article de revue

Pace, Loris | 2021-03-09

International audience. Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power...

Electrothermal modeling of GaN power transistor for high frequency power co...

Archive ouverte: Communication dans un congrès

Pace, Loris | 2020-09-07

International audience. This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electric...

Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-volta...

Archive ouverte: Communication dans un congrès

Fornasiero, Quentin | 2021-06-14

International audience. The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma follo...

Du même sujet

Extraction of packaged GaN power transistors parasitics using S-parameters

Archive ouverte: Article de revue

Pace, Loris | 2019-06

International audience. In order to better predict the high-frequency switching operation of transistors in power converters, parasitic elements of these devices such as resistances, inductances, and capacitances mu...

Characterization and modeling of 650V GaN diodes for high frequency power c...

Archive ouverte: Communication dans un congrès

Martin, Doublet | 2021-07-15

POSTER 6. International audience. The constant growth of electric consumption leads to considerable progress in power conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological buildin...

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Ch...

Archive ouverte: Communication dans un congrès

Lu, Xuyang | 2022-09-05

International audience. A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge c...

An experimental and systematic insight into the temperature sensitivity for...

Archive ouverte: Article de revue

Alim, Mohammad, | 2021-05-12

International audience. Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and mic...

Impact of aluminum casing on high-frequency transformer leakage inductance ...

Archive ouverte: Communication dans un congrès

Bakri, Reda | 2022-09-05

International audience. High-Frequency (HF) transformer is a central part of isolated HF power converters. Its parameters, in particular leakage inductance and losses, have a significant impact on the overall conver...

Chargement des enrichissements...