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[Invited] From research to production: how MBE can unlock GaN-on-Si technology

Archive ouverte : Communication dans un congrès

Semond, Fabrice | Rennesson, Stephanie | Tamariz, Sébastian | Carneiro, Elodie | Mehta, Jash | Medjdoub, F

Edité par HAL CCSD

International audience. MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE allows to grow innovative structures on silicon. Epitaxy on silicon necessarily requires a demonstration of scaling-up on large wafers used by the microelectronics industry. Properties of several epitaxial heterostructures grown on 200mm substrate are presented and discussed, emphasizing the originality of these structures and the beneficial contribution of MBE. Also, prospects and future challenges are discussed.

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