Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate

Archive ouverte : Communication dans un congrès

Mehta, Jash | Abid, Idriss | Bassaler, Julien | Pernot, Julien | Ferrandis, Philippe | Rennesson, Stephanie | Ngo, T.H. | Nemoz, Maud | Tamariz, Sébastian | Cordier, Yvon | Semond, Fabrice | Medjdoub, F

Edité par HAL CCSD

International audience. The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon has led to the development of AlGaN/GaN heterostructures for high power applications. In this frame, emerging AlxGa1-xN channel based heterostructures show promising features for next generation of power electronics. In this work, we propose the study of breakdown field variation through the AlGaN channel HEMTs-on-Silicon with various Al composition. The fabricated devices exhibited remarkable buffer breakdown field > 2.5 MV/cm for sub-micron heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate that Al-rich AlGaN channel enable both boosting the 3-terminal transistor breakdown voltage and also benefiting from a superior thermal stability.

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