De la diode au microprocesseur / Patrick Demirdjian,...

Livre | Demirdjian, Patrick. Auteur | 1994

Lumière & architecture / [coordination éditoriale Simone K. Schleifer]

Livre | 2010

GaN Schottky diode on sapphire substrate for THz frequency multiplier appli...

Archive ouverte: Article de revue

Di Gioia, Giuseppe | 2022-04

International audience. Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as ca...

Bias-dependence of surface charge at low temperature in GaN self-switching ...

Archive ouverte: Communication dans un congrès

Perez-Martin, E. | 2021-06-09

International audience. In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN h...

A method to determine wide bandgap power devices packaging interconnections

Archive ouverte: Communication dans un congrès

Pace, Loris | 2019-06-18

International audience. Wide Bandgap (WBG) power devices show very good characteristics for high frequency operation in power converters, leading to a better power integration by reducing size and weight of passive ...

High Rectification Ratio in Polymer Diode Rectifier through Interface Engin...

Archive ouverte: Article de revue

Ferchichi, Khaoula | 2021-12

International audience. In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 106. This performance has been achieved...