Afficher la couverture 'Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate | Mehta, Jash' en grand format
/5

0 avis

Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate

Archive ouverte : Communication dans un congrès

Mehta, Jash | Abid, Idriss | Bassaler, Julien | Pernot, Julien | Ferrandis, Philippe | Rennesson, Stephanie | Ngo, T.H. | Nemoz, Maud | Tamariz, Sébastian | Cordier, Yvon | Semond, Fabrice | Medjdoub, F

Edité par HAL CCSD

International audience. The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon has led to the development of AlGaN/GaN heterostructures for high power applications. In this frame, emerging AlxGa1-xN channel based heterostructures show promising features for next generation of power electronics. In this work, we propose the study of breakdown field variation through the AlGaN channel HEMTs-on-Silicon with various Al composition. The fabricated devices exhibited remarkable buffer breakdown field > 2.5 MV/cm for sub-micron heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate that Al-rich AlGaN channel enable both boosting the 3-terminal transistor breakdown voltage and also benefiting from a superior thermal stability.

Consulter en ligne

Suggestions

Du même auteur

High Al-content AlGaN channel high electron mobility transistors on silicon...

Archive ouverte: Article de revue

Mehta, Jash | 2023-01-18

International audience. The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power dev...

[Invited] From research to production: how MBE can unlock GaN-on-Si technol...

Archive ouverte: Communication dans un congrès

Semond, Fabrice | 2022-09-04

International audience. MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE a...

AlGaN Channel HEMTs for High Voltage Applications

Archive ouverte: Communication dans un congrès

Medjdoub, F | 2022-05-23

Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, EQ01.14. International audience. GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applicatio...

Du même sujet

Reading History of Science as a Physics and Mathematics Framework for Newto...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-04-19

International audience

On Mechanics and Thermodynamics Analogies in History of Physics-Mathematics...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-05-12

International audience

On the epistemic interplay between physics and mathematics such as a dynami...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-06-12

International audience

A CMOS Compatible Thermoelectric Device made of Crystalline Silicon Membran...

Archive ouverte: Article de revue

Bah, Thierno-Moussa | 2022-12-10

International audience. Herein, we report the use of nanostructured crystalline silicon as a thermoelectric material and its integration into thermoelectric devices. The proof-of-concept relies on the partial suppre...

Effet de l'angle de charge sur les harmoniques d'efforts magnétiques dans l...

Archive ouverte: Communication dans un congrès

Le Besnerais, Jean | 2016-06-07

International audience. Cet article étudie l'effet de l'angle de charge sur les efforts harmoniques de Maxwell (tangentiels et radiaux) et les bruits et vibrations d'origine magnétique dans deux machines synchrones ...

Further investigation of convolutional neural networks applied in computati...

Archive ouverte: Article de revue

Gong, Ruohan | 2022-04-07

International audience. Convolutional neural networks (CNN) have shown great potentials and have been proven to be an effective tool for some image-based deep learning tasks in the field of computational electromagn...

Chargement des enrichissements...