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Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response
Archive ouverte : Article de revue
Edité par HAL CCSD ; American Institute of Physics
International audience. For short wave infrared (SWIR) sensing, InGaAs is the leading technology combining high carrier mobility, high homogeneity and complete control over n-top doping. In the meanwhile, numerous alternative materials have tried to compete with InGaAs. Among them, colloidal nanocrystals with narrow band gap can address the current issue in designing cost-effective sensors for the SWIR range. Rather than pitting these two materials against each other, here we design a synergistic duo in which HgTe nanocrystals are used to broaden the spectral range of InGaAs while lifting the lattice matching constraints. We propose a diode geometry where a p-type HgTe NC array is coupled with n-type InGaAs wires which are used as high mobility (µ>1000 cm 2 .V-1 s-1) minority carrier extractors. This approach also demonstrates that Van der Waals heterostructures are not limited to graphene-like materials and that bulk-like III-V semiconductors can also be light sensitized by colloidal nanoparticles. This work paves the way toward further synergies between epitaxially grown and colloidally grown semiconductors for infrared detection.
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