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Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

Archive ouverte : Communication dans un congrès

Franchina Vergel, Nathali Alexandra | Post, C. | Vaurette, Francois | Lambert, Yannick | Yarekha, Dmitri | Coinon, Christophe | Fleury, G. | Kulmala, T.S. | Xu, T. | Desplanque, L. | Wallart, X. | Vanmaekelbergh, D. | Delerue, Christophe | Grandidier, B.

Edité par HAL CCSD ; IEEE

International audience. Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. We weigh up the pros and cons of each method to reach lattice constants smaller than 20 nm with a minimum of dispersion in the pore size.

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