Preindustrial GaN devices developed at the nanofabrication center of IEMN. Preindustrial GaN devices developed at the nanofabrication center of IEMN: [Invited]

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Preindustrial GaN devices developed at the nanofabrication center of IEMN. Preindustrial GaN devices developed at the nanofabrication center of IEMN: [Invited]

Archive ouverte : Communication dans un congrès

Edité par HAL CCSD

International audience

Langue: Anglais

Date de publication: 2021-06-20

Source: Transducers 2021

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