Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology

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Alaji, Issa | Aouimeur, Walid | Lepilliet, Sylvie | Gloria, Daniel | Gaquière, Christophe | Danneville, Francois | Ducournau, Guillaume | Ghanem, Haitham | Goncalves, Joao Carlos Azevedo | Chevalier, Pascal

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers

International audience. In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on silicon, this noise source can be used for high-frequency in situ noise characterization of advanced silicon CMOS or bipolar technologies in the mmW range. In previous study, the diode was used as a noise source when biased near the avalanche regime, and an excess noise ratio (ENR) up to 20 dB has been achieved in a frequency range up to 260 GHz. In this article, the ENR value of the diode is retrieved from the electrical model and compared to the value extracted by measurements. The extracted ENR value was also studied for several diode sizes and biasing currents and measured up to 325 GHz, with a good agreement with the modeling.

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