High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Archive ouverte : Communication dans un congrès

Abid, Idriss | Hamdaoui, Youssef | Mehta, Jash | Medjdoub, F

Edité par HAL CCSD

222, session 2A, A Nano-scale production and characterization. International audience. In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer enabling a positive threshold voltage higher than +1 V. The high voltage operation was ensured with a bufferbased on AlN/GaN superlattice (SL) delivering a vertical breakdown voltage about 1.1 kV for a leakage current density of 1mA/cm². With the substrate grounded, hard breakdown voltage transistors at VGS = 0V is about 1.45 kV, corresponding to an outstanding breakdown field higher than 2.4 MV/cm. High voltage characterizations revealed a state of the art combination of breakdown voltage at VGS = 0V together with low electron trapping effects up to 1.4 kV as assessed by means of substrate ramp measurements.

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