Afficher la couverture 'Local substrate removal for next generation GaN-on-Silicon power transistors | Hamdaoui, Youssef' en grand format
/5

0 avis

Local substrate removal for next generation GaN-on-Silicon power transistors

Archive ouverte : Communication dans un congrès

Hamdaoui, Youssef | Abid, Idriss | Ziouche, Katir | Medjdoub, F

Edité par HAL CCSD

International audience

Consulter en ligne

Suggestions

Du même auteur

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off...

Archive ouverte: Communication dans un congrès

Abid, Idriss | 2022-05-07

222, session 2A, A Nano-scale production and characterization. International audience. In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on ...

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Fie...

Archive ouverte: Article de revue

Abid, Idriss | 2022

International audience. We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved ...

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Archive ouverte: Communication dans un congrès

Abid, Idriss | 2020-09-13

International audience. Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher oper...

Du même sujet

Reading History of Science as a Physics and Mathematics Framework for Newto...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-04-19

International audience

On Mechanics and Thermodynamics Analogies in History of Physics-Mathematics...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-05-12

International audience

On the epistemic interplay between physics and mathematics such as a dynami...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-06-12

International audience

A CMOS Compatible Thermoelectric Device made of Crystalline Silicon Membran...

Archive ouverte: Article de revue

Bah, Thierno-Moussa | 2022-12-10

International audience. Herein, we report the use of nanostructured crystalline silicon as a thermoelectric material and its integration into thermoelectric devices. The proof-of-concept relies on the partial suppre...

Effet de l'angle de charge sur les harmoniques d'efforts magnétiques dans l...

Archive ouverte: Communication dans un congrès

Le Besnerais, Jean | 2016-06-07

International audience. Cet article étudie l'effet de l'angle de charge sur les efforts harmoniques de Maxwell (tangentiels et radiaux) et les bruits et vibrations d'origine magnétique dans deux machines synchrones ...

Further investigation of convolutional neural networks applied in computati...

Archive ouverte: Article de revue

Gong, Ruohan | 2022-04-07

International audience. Convolutional neural networks (CNN) have shown great potentials and have been proven to be an effective tool for some image-based deep learning tasks in the field of computational electromagn...

Chargement des enrichissements...