Afficher la couverture 'In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy | Bucamp, Alexandre' en grand format
/5

0 avis

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Archive ouverte : Article de revue

Bucamp, Alexandre | Coinon, Christophe | Lepilliet, Sylvie | Troadec, David | Patriarche, Gilles | Diallo, M | Avramovic, Vanessa | Haddadi, Kamel | Wallart, X. | Desplanque, L.

Edité par HAL CCSD ; Institute of Physics

International audience. In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.

Consulter en ligne

Suggestions

Du même auteur

In-plane InSb nanowires grown by selective area molecular beam epitaxy on s...

Archive ouverte: Article de revue

Desplanque, L. | 2018-07-27

International audience

Pushing the limit of lithography for patterning two-dimensional lattices in...

Archive ouverte: Communication dans un congrès

Franchina Vergel, Nathali Alexandra | 2021-04-08

International audience. Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. H...

75 nm gate length PHEMT with f max = 800 GHz using asymmetric gate recess: ...

Archive ouverte: Article de revue

Samnouni, M. | 2021-09

International audience. We report a high maximum frequency of oscillation (f max) and a current-gain cutoff frequency (f T) of 800 and 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHE...

Du même sujet

Growth of hexagonal BN by molecular beam epitaxy on nickel. Croissance de B...

Archive ouverte: Thèse

Hadid, Jawad | 2021-04-07

Exploiting the electrical properties of graphene in devices remains a challenge. Due to its two-dimensional nature, its properties are influenced by the environment (substrate…). Recently, many studies have shown that hexagonal bo...

Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils

Archive ouverte: Article de revue

Hadid, Jawad | 2021-07-15

International audience. Hexagonal boron nitride was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N 3 H 6) as precursor. Our photoemission analysis shows that several componen...

Chargement des enrichissements...