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Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Archive ouverte : Communication dans un congrès

Fornasiero, Quentin | Defrance, N. | Lesecq, Marie | Frayssinet, Eric | Cordier, Yvon | Chevalier, Florian | Idir, Nadir | de Jaeger, Jean-Claude

Edité par HAL CCSD

International audience. The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in the AlGaN barrier, contributing to reduce the back shift of both devices threshold voltages.

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