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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Archive ouverte : Article de revue

Irekti, Mohamed-Reda | Lesecq, Marie | Defrance, N. | Okada, Etienne | Frayssinet, Eric | Cordier, Yvon | Tartarin, Jean-Guy | de Jaeger, Jean-Claude

Edité par HAL CCSD ; IOP Publishing

International audience. In this letter, a record performance at 40 GHz obtained on AlGaN/GaN high electron mobility transistor (HEMT) grown on Hydride Vapor Phase Epitaxy (HVPE) Free-Standing GaN substrate is reported. An output power density of 2 W.mm-1 associated with 20.5 % power added efficiency and a linear power gain (Gp) of 4.2 dB is demonstrated for 70 nm gate length device. The device exhibits a maximum DC drain current density of 950 mA.mm-1 and a peak extrinsic transconductance (gm Max) of 300 mS.mm-1 at VDS = 6 V. A 100 GHz maximum intrinsic cutoff frequency fT, and a maximum intrinsic oscillation frequency f Max of 125 GHz are obtained from Sparameters measurement. This performance is very promising for HEMTs grown on Free-Standing GaN substrate.

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