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Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers

Archive ouverte : Article de revue

Strenaer, R. | Guhel, Y. | Brocero, G. | Gaquiere, C. | Boudart, B.

Edité par HAL CCSD ; Elsevier

International audience. Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.

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