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Hot-carrier injections in SiO2

Archive ouverte : Article de revue

Vuillaume, D | Bravaix, Alain | Goguenheim, D

Edité par HAL CCSD ; Elsevier

International audience. We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage currents in very thin (<∼5 nm) gate-oxide.

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