A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology

Archive ouverte : Communication dans un congrès

Fiorese, Victor | Carlos, Joao | Goncalves, Azevedo | Bouvot, Simon | Dubois, Emmanuel | Gaquière, Christophe | Ducournau, Guillaume | Danneville, François | Lépilliet, Sylvie | Gloria, Daniel

Edité par HAL CCSD ; IEEE

oral EuMIC08-5Session EuMIC08 - Components and Subsystems for 100 GHz and Above. International audience. A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup using this NS, a two-stage cascode Low Noise Amplifier (LNA) composed of 4 high speed NPN transistors is cascaded at its output, targeting high available Excess Noise Ratios (ENRav). ENRav levels have been extracted, showing tunable values ranged between 0 dB to 37 dB in the 140-170 GHz frequency range.

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