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Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model

Archive ouverte : Communication dans un congrès

Islam, Shariful | Alim, Mohammad Abdul | Tahsin, Anika | Rakib, Famin Rahman | Rafi, Refat Uddin | Gaquière, Christophe

Edité par HAL CCSD ; IEEE

International audience. This work deals with the performance projection of GaN HEMT towards experimental verification using Curtice model. To emphasize and identify their effects on the linear and saturation regions, we adjusted the three parameters employed in the Curtice model to fit the experimental data of the I-V characteristics curve with varying values of α,λ , and β . Apart from that, we will also investigate the transconductance and output conductance and compare the both simulated and experimental data. The DC results of the studied GaN HEMT were well matched by measurements and simulations.

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