Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

Archive ouverte : Communication dans un congrès

Kane, Ousmane Magatte | Lucci, Luca | Scheiblin, Pascal | Poiroux, Thierry | Barbé, Jean-Charles | Danneville, Francois

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers Inc.

International audience. Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very attractive for RF-mmW circuits thanks to the excellent reported RF figure of merits (FOMs).In this article, we report on an experimental investigation of the back gate biasing impact on the high-frequency (HF) noise performances of an advanced 22 nm UTBB-FDSOI technology developed by GLOBALFOUNDRIES. For the lower gate voltages, the back gate biasing was shown to decrease by one third the equivalent noise resistance (Rn). Moreover, a 3 dB increase for the associated gain (Ga) was achieved at Vg=0.3V. A relaxed contacted-poly-pitch was also shown to decrease Rn by 11%.

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