An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

Archive ouverte : Communication dans un congrès

Albany, F. | Curutchet, A. | Labat, N. | Lecourt, F. | Walasiak, E. | Maher, H. | Cordier, Y. | Defrance, N. | Malbert, N.

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers Inc.

International audience. The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-situ monitoring of gate and drain current degradations can be achieved without the use of conventional I-V interim measurements. A negative shift of the threshold voltage leading to an increase of the drain current is observed after the stress sequence carried out in semi-on-state regime. Currents monitoring during non-stressful steps reveal no permanent degradation up to stress step at VDS ˜ 19.5V and a self-healing mechanism occurring during non-stressful steps. By avoiding intermediate I-V control measurements after each stress step, this methodology provides a safe in-situ monitoring of degradations.

• Contient
• Sujet
• Description
• Oeuvre