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Single-pole-double-throw RF switches based on monolayer MoS2

Archive ouverte : Communication dans un congrès

Kim, Myungsoo | Pallecchi, Emiliano | Happy, Henri | Akinwande, Deji

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers Inc.

International audience. Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (FCO=1/2πRON COFF), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.

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