Optoelectronic mixing with high-frequency graphene transistors

Archive ouverte : Article de revue

Montanaro, A. | Wei, W. | de Fazio, D. | Sassi, U. | Soavi, G. | Aversa, P. | Ferrari, A. | Happy, H. | Legagneux, P. | Pallecchi, Emiliano

Edité par HAL CCSD ; Nature Publishing Group

An Author Correction to this article was published on 03 June 2021. International audience. Abstract Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level ( E F ). At low E F (<130 meV), a positive photocurrent is generated, while at large E F (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.)

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