Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions

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Elmi, E | Cristini-Robbe, R | Chen, M. | Wei, B | Bernard, R. | Yarekha, Dmitri | Okada, Etienne | Ouendi, Saliha | Portier, X. | Gourbilleau, F. | Xu, T. | Stievenard, D.

Edité par HAL CCSD ; Institute of Physics

International audience. This paper describes an original design leading to the field effect passivation of Si n +-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al 2 O 3 /SiN x :H stacks on the top of implanted Si n +-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.

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