Afficher la couverture 'Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination | Billet, Maximilien' en grand format
/5

0 avis

Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination

Archive ouverte : Communication dans un congrès

Billet, Maximilien | Desmet, Yann | Bavedila, Fuanki | Ducournau, Guillaume | Barbieri, Stefano | Lampin, Jean-Francois | Peytavit, Emilien

Edité par HAL CCSD ; IEEE

International audience. We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.

Consulter en ligne

Suggestions

Du même auteur

Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications

Archive ouverte: Communication dans un congrès

Billet, Maximilien | 2017-08-27

International audience. We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high pho...

High efficiency UTC photodiode for high spectral efficiency THz links

Archive ouverte: Communication dans un congrès

Latzel, Philipp | 2017-08-27

International audience. This paper presents high-efficiency Unitravelling carrier photodiodes for THz communications. Using high-level modulation schemes, QAM-16 and 32 Gbit/s data-rate is obtained using these devic...

Development of a millimeter-long Travelling wave THz photomixer

Archive ouverte: Article de revue

Bavedila, Fuanki | 2021-07-15

International audience. THz sources based on the optical-heterodyne (photo)mixing in an ultrafast photodetector are very promising since they operate at room temperature, are potentially compact, cost-efficient and,...

Du même sujet

Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications

Archive ouverte: Communication dans un congrès

Billet, Maximilien | 2017-08-27

International audience. We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high pho...

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiG...

Archive ouverte: Article de revue

Maye, Caroline | 2022-01

This article is an expanded version from the 2020 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, Cardiff, 16-17 July 2020.. International audience. This article aims to discus...

New laser lines from a terahertz ammonia laser pumped by a quantum cascadel...

Archive ouverte: Communication dans un congrès

Lampin, Jean-Francois | 2021-08-29

oral. International audience. We present an experimental investigation into new continuous-wave laser lines from a terahertz ammonia laser pumped by a quantum cascade laser. These lines were investigated with the he...

Towards 3D selective manipulation of cells and microparticles with spiralin...

Archive ouverte: Communication dans un congrès

Baudoin, Michael | 2021-11-29

International audience. In previous papers [Baudoin et al., Sci. Adv. 5, eaav1967 (2019); Baudoin et al., Nat. Commun. 11, 4244 (2020)], our team demonstrated the possibility to trap and manipulate microparticles an...

Active holographic tweezers based on spiraling interdigitated transducers

Archive ouverte: Communication dans un congrès

Baudoin, Michael | 2022-05-23

International audience. Recently, our team demonstrated the selective manipulations of microparticles [Baudoin et al., Sci. Adv. 5, eaav1967 (2019)] and cells [Baudoin et al., Nat. Commun. 11, 4244 (2020)] in a stan...

Power measurement setup development for on-wafer characterization at 185-19...

Archive ouverte: Communication dans un congrès

Maye, Caroline | 2020-07-16

International audience. This article presents off-wafer scalar power setup dedicated to load-pull measurement for characterization of on-wafer active devices between 185 and 191 GHz. The system architecture allows u...

Chargement des enrichissements...