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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Archive ouverte : Article de revue

Ngo, Thi Huong | Comyn, Rémi | Chenot, Sébastien | Brault, Julien | Damilano, Benjamin | Vezian, Stephane | Frayssinet, Eric | Cozette, Flavien | Defrance, N. | Lecourt, François | Labat, Nathalie | Maher, Hassan | Cordier, Yvon

Edité par HAL CCSD ; Elsevier

International audience. We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices.

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