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  • Development of micron sized photonic devices based on deep GaN etching

    Archive ouverte: Article de revue

    Dogheche, Karim | 2021-03-02

    International audience. In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etchi...

  • Fabrication of μLEDS for light fidelity optical transmission

    Archive ouverte: Communication dans un congrès

    Dogheche, Karim | 2021-04-28

    International audience. The recent years have announced the emergence of novel photonic technologies based on III-nitrides semiconductors. Gathering the progress in materials maturity and the advance in ...

  • Investigation of luminescence centers inside InGaN/GaN multiple quantum wel...

    Archive ouverte: Article de revue

    Ayarcı Kuruoğlu, Neslihan | 2022-08

    International audience. InGaN/GaN multiple quantum well-based light-emitting diode LEDs were investigated over a wide range of injection currents (0.04 mA–0.1 A) and temperature (80–370 K)-dependent electroluminesce...

  • Morphological, structural, electrical, and piezoelectric analysis of hydrot...

    Archive ouverte: Article de revue

    Hamdi, Abderrahmane | 2022-07

    International audience. In this present work, we have successfully fabricated a piezoelectric structure based on ZnO nanowires (ZnO NWs) using a simple, low cost and environmentally friendly hydrothermal method. Thi...

  • Determination of band tail widths in MOCVD grown InGaN single layer within ...

    Archive ouverte: Article de revue

    Özdemir, Orhan | 2023-03

    International audience. Within a p-i-n LED structure, energy band gaps of MOCVD grown %10 In content InGaN and GaN layers were obtained through traditional UV–Visible transmission-absorption measurements and utilizi...

  • Relation between thermal quenching of photoluminescence and negative capaci...

    Archive ouverte: Article de revue

    Özdemir, Orhan | 2023-05

    International audience. Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV) measurements were carried out to detect radiative and non-radiative transitions on InGaN/GaN quantum well (QW) blue...

  • A barium titanate‐on‐oxide insulator optoelectronics platform

    Archive ouverte: Article de revue

    Cao, Yu | 2021-09

    International audience. Electro-optic modulators are among the most important building blocks in optical communication networks. Lithium niobate, for example, has traditionally been widely used to fabricate high-spe...