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Extraction of packaged GaN power transistors parasitics using S-parameters
Archive ouverte: Article de revue
Pace, Loris | 2019-06
International audience. In order to better predict the high-frequency switching operation of transistors in power converters, parasitic elements of these devices such as resistances, inductances, and capacitances mu...
... gallium nitride (GaN) packaged power transistor using S-parameters in order to extract the parasitics stemming from ohmic contacts and packaging. As...
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Characterization and modeling of 650V GaN diodes for high frequency power c...
Archive ouverte: Communication dans un congrès
Martin, Doublet | 2021-07-15
POSTER 6. International audience. The constant growth of electric consumption leads to considerable progress in power conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological buildin...
... Gallium Nitride (GaN) as a technological building bloc permits to develop converter operating at high frequency with reduced volume and weight....
... gallium nitride (GaN), diode, power converter, characterization, s-parameters, model I. INTRODUCTION Because of a constant research for increasing...
... gallium nitride (GaN) [2], [3]. GaN arouses a great interest in power electronics permitting to significantly outperforms power devices based on silicium...
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Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Ch...
Archive ouverte: Communication dans un congrès
Lu, Xuyang | 2022-09-05
International audience. A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge c...
... ≪Gallium Nitride (GaN)≫, ≪Double pulse test≫, ≪Device characterisation≫, ≪Switching losses≫, ≪Threshold voltage shift≫ Abstract A new method is proposed...
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An experimental and systematic insight into the temperature sensitivity for...
Archive ouverte: Article de revue
Alim, Mohammad, | 2021-05-12
International audience. Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and mic...
... gallium nitride (GaN); high electron-mobility transistor (HEMT); equivalent-circuit modeling; microwave frequency; scattering-parameter measurements;...
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Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Co...
Archive ouverte: Communication dans un congrès
Pace, Loris | 2022-09-05
International audience. This paper proposes a Multi-PCB (M-PCB) design of a half-bridge using bottom-side cooled GaN transistors with optimal layout and thermal management. The fabrication process only requires limi...
... Gallium Nitride (GaN), Parasitic inductance, Thermal Design Abstract This paper proposes a Multi-PCB (M-PCB) design of a half-bridge using bottom-...
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