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Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapp...
Archive ouverte: Communication dans un congrès
Bassaler, Julien | 2022-05-03
International audience
Consultable en ligne -
Investigation on GaN channel thickness downscaling in high electron mobilit...
Archive ouverte: Communication dans un congrès
Elwaradi, Reda | 2022-05-03
International audience
Consultable en ligne -
Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electro...
Archive ouverte: Communication dans un congrès
Abid, Idriss | 2019-07-07
International audience. GaN and SiC materials and their device technology have matured and become commerciallyavailable. Fundamental material properties will soon limit the performance. Consequently, a novelbreakthr...
Consultable en ligne
