Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm

Archive ouverte : Communication dans un congrès

Wehbi, Mohammed | Margalef-Rovira, Marc | Durand, Cedric | Lepilliet, Sylvie | Serrano, Ariana L.C. | Ferrari, Philippe

Edité par HAL CCSD ; IEEE

International audience. This paper presents an original design for dual-band dual-mode bandpass filter based on a single grounded patch resonator. It is implemented on BiCMOS 55 nm technology to operate at 180 GHz and 270 GHz. A full control of both bands is possible - thanks to the usage of vias and slots. The grounded vias significantly allow the reduction of the patch resonator realizing an overall size of 0.04 mm2, which is a fundamental aspect for (Bi)CMOS. The achieved results show a good agreement between simulation and measurement results with insertion loss of 4-5 dB in the passband, return loss of 14 dB and relative bandwidths of about 18%.

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