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High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz

Archive ouverte : Communication dans un congrès

Maes, Dennis | Reis, Luis | Poelman, Stijn | Vissers, Ewoud | Avramovic, Vanessa | Zaknoune, Mohammed | Roelkens, Gunther | Lemey, Sam | Peytavit, Emilien | Kuyken, Bart

Edité par HAL CCSD ; Optica Publishing Group

Session Photodetection (SM3K). International audience. Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0 . 45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.

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